L2SK3019LT3G datasheet(3/4 Pages) LRC

Part #	L2SK3019LT3G

Description	Silicon N-Channel MOSFET Fast switching speed

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

L2SK3019LT1G

−50

0

25

150

0

3

6

9

CHANNEL TEMPERATURE : Tch (

°C)

−25

50

75

100 125

2

1

4

5

7

8

VGS

=4V

Pulsed

ID

=100mA

ID

=50mA

Fig.7 Static drain-source on-state

resistance vs. channel

temperature

0.0001

0.001

0.01

0.02

0.5

DRAIN CURRENT : ID (A)

0.005

0.0002

0.0005 0.001 0.002

0.005 0.01 0.02

0.05

0.1

0.2

0.1

0.2

0.5

0.002

Ta

=−25°C

25

°C

75

°C

125

°C

VDS

=3V

Pulsed

Fig.8 Forward transfer

admittance vs. drain current

200m

SOURCE-DRAIN VOLTAGE : VSD (V)

1.5

1

0.5

0

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

VGS

=0V

Pulsed

Ta

=125°C

75

°C

25

°C

−25°C

Fig.9 Reverse drain current vs.

source-drain voltage (

Ι)

200m

SOURCE-DRAIN VOLTAGE : VSD (V)

1.5

1

0.5

0

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

Ta

=25°C

Pulsed

VGS

=4V

0V

Fig.10 Reverse drain current vs.

source-drain voltage (

ΙΙ)

0.1

1

2

50

DRAIN-SOURCE VOLTAGE : VDS (V)

0.5

0.2

0.5

1

2

5

10

20

50

5

10

20

Ciss

Coss

Crss

Ta

=25°C

f

=1MHZ

VGS

=0V

Fig.11 Typical capacitance vs.

drain-source voltage

0.1

10

20

500

DRAIN CURRENT : ID (mA)

5

0.2

0.5

1

2

5

10

20

50

100

200

1000

2

100

Ta

=25°C

VDD

=5V

VGS

=5V

RG

=10Ω

Pulsed

td(off)

tr

td(on)

tf

Fig.12 Switching characteristics

(See Figures 13 and 14 for

the measurement circuit

and resultant waveforms)

Switching characteristics measurement circuit

Fig.13 Switching time measurement circuit

VGS

RG

VDS

D.U.T.

ID

RL

VDD

90%

50%

10%

90%

10%

50%

Pulse width

10%

VGS

VDS

90%

tf

toff

td (off)

tr

ton

td (on)

Fig.14 Switching time waveforms

Rev .A 3/4

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