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L2SD2114KWLT1G Datasheet(PDF) 1 Page - Leshan Radio Company |
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L2SD2114KWLT1G Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 4 page LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 SOT– 23 (TO–236AB) L2SD2114KVLT1G Series 1 BASE 2 EMITTER COLLECTOR 3 Absolute maximum ratings (Ta=25 °C) Parameter VCBO VCEO VEBO IC PC Tj Tstg 25 V V V A(DC) W °C °C 20 12 0.5 A(Pulse) 1 ∗ 0.2 150 −55∼+150 Symbol Limits Unit ∗ Single pulse Pw=100ms Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) fT ∗ Cob Min. 25 20 12 − − − − − − − − − − 0.18 350 8.0 − − − 0.5 0.5 0.4 − − VIC =10µA IC =1mA IE =10µA VCB =20V VEB =10V IC/IB =500mA/20mA VCE =10V, IE=−50mA, f=100MHz VCB =10V, IE=0A, f=1MHz V V µA µA hFE 820 − 2700 VCE =3V, IC=10mA − V MHz pF Ron − 0.8 − IB =1mA, Vi=100mV(rms), f=1kHz pF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current hFE Values Classification, Device Marking and Ordering Information Device hFE Marking Shipping L2SD2114KVLT1G 820~1800 BV 3000/Tape&Reel L2SD2114KVLT3G 820~1800 BV 10000/Tape&Reel L2SD2114KWLT1G 1200~2700 BW 3000/Tape&Reel L2SD2114KWLT3G 1200~2700 BW 10000/Tape&Reel 4) We declare that the material of product compliance with RoHS requirements. 2 3 Rev.O 1/4 |
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