3

BSR18A

PNP General Purpose Amplifier

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Thermal Characteristics

TA = 25°C unless otherwise noted

This device is designed as a general purpose amplifier and

switching applications at collector currents of 10

µA to 100

mA. Sourced from Process 66.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

200

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

*BSR18A

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

C

E

B

SOT-23

Mark: T92

1997 Fairchild Semiconductor Corporation

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.