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BD534 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD534
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW =300
µs, duty Cycle =1.5% Pulsed
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V
VCEO
Collector-Emitter Voltage
: BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 8
A
IB
Base Current
- 1
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
: BD534
: BD536
: BD538
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
- 100
- 100
- 100
µA
µA
µA
ICES
Collector Cut-off Current
: BD534
: BD536
: BD538
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 1
mA
hFE
* DC Current Gain
: ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
VCE = -2 V, IC = - 500mA
VCE = - 5V, IC = - 10mA
VCE = - 2V, IC = - 2A
40
20
15
25
15
hFE
hFE Groups
J
: ALL DEVICE
K
: ALL DEVICE
VCE = - 2V, IC = - 2A
VCE = - 2V, IC = - 3A
VCE = -2V, IC = - 2A
VCE = - 2V, IC = - 3A
30
15
40
20
75
100
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 2A, IB = - 0.2A
IC = - 6A, IB = - 0.6A
- 0.8
- 0.8
V
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 2V, IC = - 2A
- 1.5
V
fT
Current Gain Bandwidth Product
VCE = - 1V, IC = - 500mA
3
12
MHz
BD534/536/538
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
1.Base
2.Collector
3.Emitter
1
TO-220




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