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BD440 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD440
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=300
µs, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD440
: BD442
- 60
- 80
V
V
VCES
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
V
V
VCEO
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
V
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 4
A
ICP
*Collector Current (Pulse)
- 7
A
IB
Base Current
- 1
A
PC
Collector Dissipation (TC=25°C)
36
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 1 50
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BD440
: BD442
IC = - 100mA, IB = 0
-60
-80
V
V
ICBO
Collector Cut-off Current
: BD440
: BD442
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
- 100
- 100
µA
µA
ICES
Collector Cut-off Current
: BD440
: BD442
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
- 100
- 100
µA
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 1
mA
hFE
* DC Current Gain
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
VCE = - 5V, IC = - 10mA
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
20
15
40
40
25
15
140
140
140
140
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 2A, IB = - 0.2A
- 0.8
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 5V, IC = - 10mA
VCE = -1 V, IC = - 2A
-0.58
- 1.5
V
V
fT
Current Gain Bandwidth Product
VCE = - 1V, IC = - 250mA
3
MHz
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
1
TO-126
1. Emitter
2.Collector
3.Base




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