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BD439 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD439
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=300
µs, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD439
: BD441
60
80
V
V
VCES
Collector-Emitter Voltage
: BD439
: BD441
60
80
V
V
VCEO
Collector-Emitter Voltage
: BD439
: BD441
60
80
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
4
A
ICP
*Collector Current (Pulse)
7
A
IB
Base Current
1
A
P C
Collector Dissipation (TC=25°C)
36
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD439
: BD441
IC = 100mA, IB = 0
60
80
V
V
ICBO
Collector Cut-off Current
: BD439
: BD441
VCB = 60V, IE = 0
VCB = 80V, IE = 0
100
100
µA
µA
ICES
Collector Cut-off Current
: BD439
: BD441
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
100
100
µA
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE
* DC Current Gain
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
VCE = 5V, IC = 10mA
VCE =1V, IC = 500mA
VCE = 1V, IC = 2A
20
15
40
40
25
15
130
130
140
140
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.8
V
VBE(on)
* Base-Emitter ON Voltage
VCE = 5V, IC = 10mA
VCE = 1V, IC = 2A
0.58
1.5
V
V
fT
Current Gain Bandwidth Product
VCE = 1V, IC = 250mA
3
MHz
BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
1
TO-126
1. Emitter
2.Collector
3.Base




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