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BD434 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD434
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VCES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VCEO
Collector-Emitter Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 4
A
ICP
*Collector Current (Pulse)
- 7
A
IB
Base Current
- 1
A
PC
Collector Dissipation (TC=25°C)
36
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
1. Emitter
2.Collector
3.Base




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