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BD175 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD175
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=300
µs, duty Cycle=1.5% Pulsed
hFE Classificntion
* Classification 16: Only BD175
Symbol
Parameter
Value
Units
VCBO
*Collector-Base Voltage
: BD175
: BD177
: BD179
45
60
80
V
V
V
VCEO
Collector-Emitter Voltage
: BD175
: BD177
: BD179
45
60
80
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
3
A
ICP
*Collector Current (Pulse)
7
A
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
IC = 100mA, IB = 0
45
60
80
V
V
V
ICBO
Collector Cut-off Current
: BD175
: BD177
: BD179
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
100
100
100
µA
µA
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE1
hFE2
* DC Current Gain
VCE = 2V, IC = 150mA
VCE = 2V, IC = 1A
40
15
250
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.1A
0.8
V
VBE(on)
* Base-Emitter On Voltage
VCE = 2V, IC = 1A
1.3
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 250mA
3
MHz
Classification
6
10
16
hFE1
40 ~ 100
63 ~ 160
100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
1
TO-126
1. Emitter
2.Collector
3.Base




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