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BD136 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BD136
Description  Medium Power Linear and Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=350
µs, duty Cycle=2% Pulsed
hFE Classificntion
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
VCEO
Collector-Emitter Voltage
: BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 1.5
A
ICP
Collector Current (Pulse)
- 3.0
A
IB
Base Current
- 0.5
A
PC
Collector Dissipation (TC=25°C)
12.5
W
PC
Collector Dissipation (Ta=25°C)
1.25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
IC = - 30mA, IB = 0
- 45
- 60
- 80
V
V
V
ICBO
Collector Cut-off Current
VCB = - 30V, IE = 0
- 0.1
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 10
µA
hFE1
hFE2
hFE3
* DC Current Gain
VCE = - 2V, IC = - 5mA
VCE = - 2V, IC = - 0.5A
VCE = - 2V, IC = - 150mA
25
25
40
250
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 500mA, IB = - 50mA
- 0.5
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 2V, IC = - 0.5A
- 1
V
Classification
6
10
16
hFE3
40 ~ 100
63 ~ 160
100 ~ 250
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
1
TO-126
1. Emitter
2.Collector
3.Base




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