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BCW66G Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BCW66G
Description  NPN General Purpose Amplifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
Absolute Maximum Ratings * T
C=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
- Continuous
1
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10µA75
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10µA5
V
ICES
Collector Cut-off Current
VCB = 45V, IE = 0
VCB = 45V, IE = 0
TA = 150°C
20
nA
20
µA
IEBO
Emitter Cut-off Current
VEB = 4V
20
nA
hFE
DC Current Gain
VCE = 10V, IC = 100µA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
VCE = 2V, IC = 500mA
50
110
160
60
400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA
0.3
0.7
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
2
V
Cobo
Output Capacitance
VCB = 10V, f = 1MHz
12
pF
Cibo
Input Capacitance
VEB = 0.5V, f = 1MHz
80
pF
fT
Current gain Bandwidth Product
VCE = 10V, IC = 20mA,
f = 100MHz
100
MHz
NF
Noise Figure
VCE = 5V, IC = 0.2mA, RS = 1kΩ,
f = 1KHz, BW = 200Hz
10
dB
ton
Turn-On Time
IB1 = IB2 = 15mA
IC = 150mA, RL = 150Ω
100
ns
toff
Turn-Off Time
400
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: EG




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