Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

30

-

-

V

Static Drain-Source On-Resistance

2

-

-

4

mΩ

-

-

6

mΩ

Gate Threshold Voltage

0.8

-

3

V

Forward Transconductance

-

55

-

S

Drain-Source Leakage Current

-

-

1

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

60

96

nC

Gate-Source Charge

-

8.5

-

nC

Gate-Drain ("Miller") Charge

-

38

-

nC

Turn-on Delay Time

2

-

14

-

ns

Rise Time

-

83

-

ns

Turn-off Delay Time

-

66

-

ns

Fall Time

-

120

-

ns

Input Capacitance

-

4090

6540

pF

Output Capacitance

-

1010

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

890

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.3

V

Reverse Recovery Time

2

-

51

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

63

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Package limitation current is 75A, calculated continuous current

based on maximum allowable junction temperature is 125A.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

AP90T03GS