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2SK3541T2L Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK3541T2L Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 4 page  2SK3541 Transistor Rev.B 2/3 Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Ciss |Yfs| Coss Crss Min. − 30 − 0.8 − − 20 − − − − − − 5 13 − 9 4 ±1 − 1.0 1.5 8 − 713 − − − − µAVGS=±20V, VDS=0V ID =10µA, VGS=0V VDS =30V, VGS=0V VDS =3V, ID=100µA ID =10mA, VGS=4V ID =1mA, VGS=2.5V VDS =5V ID =10mA, VDS=3V VGS =0V f =1MHz V µA V Ω Ω pF mS pF pF td(on) − 15 − ID =10mA, VDD 5V ns tr − 35 − VGS =5V ns td(off) − 80 − RL =500Ω ns tf − 80 − RG =10Ω ns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance Electrical characteristic curves 0 1 23 45 0 0.05 0.1 0.15 DRAIN-SOURCE VOLTAGE : VDS (V) 3V 3.5V 2.5V VGS =1.5V 4V 2V Fig.1 Typical output characteristics Ta =25°C Pulsed 04 0.1m 100m GATE-SOURCE VOLTAGE : VGS (V) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m Ta =125°C 75 °C 25 °C −25°C VDS =3V Pulsed Fig.2 Typical transfer characteristics −50 0 0 1 1.5 2 CHANNEL TEMPERATURE : Tch ( °C) 0.5 −25 25 50 75 100 125 150 VDS =3V ID =0.1mA Pulsed Fig.3 Gate threshold voltage vs. channel temperature 0.001 1 2 50 DRAIN CURRENT : ID (A) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 Ta =125°C 75 °C 25 °C −25°C VGS =4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι) 0.001 1 2 50 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 VGS =2.5V Pulsed DRAIN CURRENT : ID (A) Ta =125°C 75 °C 25 °C −25°C Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ) 0 5 10 15 20 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) ID =0.1A Ta =25°C Pulsed ID =0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage |
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