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BC807 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BC807
Description  Switching and Amplifier Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
: BC807
: BC808
-50
-30
V
V
VCEO
Collector-Emitter Voltage
: BC807
: BC808
-45
-25
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-800
mA
PC
Collector Power Dissipation
-310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -10mA, IB=0
-45
-25
V
V
BVCES
Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -0.1mA, VBE=0
-50
-30
V
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -0.1mA, IC=0
-5
V
ICES
Collector Cut-off Current
VCE= -25V, VBE=0
-100
nA
IEBO
Emitter Cut-off Current
VEB= -4V, IC=0
-100
nA
hFE1
hFE2
DC Current Gain
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
100
60
630
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
-0.7
V
VBE (on)
Base-Emitter On Voltage
VCE= -1V, IC= -300mA
-1.2
V
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA
f=50MHz
100
MHz
Cob
Output Capacitance
VCB= -10V, f=1MHz
12
pF
BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3




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