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BAS21W Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS21W Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 4 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 625 K/W Rth(j-sp) thermal resistance from junction to solder point - - 300 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 100 mA - - 1.0 V IF = 200 mA - - 1.25 V IR reverse current VR = 200 V - - 100 nA VR = 200 V; Tj = 150 °C - - 100 µA Cd diode capacitance f = 1 MHz; VR =0V - - 2 pF trr reverse recovery time [1] --50 ns |
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