NVMFD5852NL datasheet(2/6 Pages) ONSEMI

Part #	NVMFD5852NL

Description	Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NVMFD5852NL, NVMFD5852NLWF

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

37.3

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 40 V

TJ = 25°C

1.0

mA

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.4

2.4

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

6.3

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 20 A

5.3

6.9

mW

VGS = 4.5 V, ID = 20 A

8.7

12

Forward Transconductance

gFS

VDS = 5 V, ID = 5 A

24

S

CHARGES AND CAPACITANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

1800

pF

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

180

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 32 V,

ID = 20 A

20

nC

Threshold Gate Charge

QG(TH)

1.5

Gate−to−Source Charge

QGS

5.5

Gate−to−Drain Charge

QGD

10.9

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 32V, ID = 20 A

36

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDS = 32 V,

ID = 20 A, RG = 2.5 W

12

ns

Rise Time

tr

52

Turn−Off Delay Time

td(off)

21

Fall Time

tf

13

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 32 V,

ID = 20 A, RG = 2.5 W

12

ns

Rise Time

tr

8.0

Turn−Off Delay Time

td(off)

27

Fall Time

tf

5.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 20 A

TJ = 25°C

0.84

1.1

V

TJ = 125°C

0.69

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 20 A

22.3

ns

Charge Time

ta

12.8

Discharge Time

tb

9.4

Reverse Recovery Charge

QRR

15.2

nC

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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