NGTB30N60FWG datasheet(4/10 Pages) ONSEMI

Part #	NGTB30N60FWG

Description	Insulated Gate Bipolar Transistor (IGBT)

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Manufacturer	ONSEMI [ON Semiconductor]

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NGTB30N60FWG

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TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. Output Characteristics

VCE, COLLECTOR−EMITTER VOLTAGE (V)

5

4

3

2

1

0

180

Figure 3. Output Characteristics

Figure 4. Typical Transfer Characteristics

VCE, COLLECTOR−EMITTER VOLTAGE (V)

VGE, GATE−EMITTER VOLTAGE (V)

12

8

4

0

Figure 5. VCE(sat) vs. TJ

Figure 6. Typical Capacitance

TJ, JUNCTION TEMPERATURE (°C)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−75

0

0.5

1.0

80

40

20

0

10

100

1000

VGE = 17 V to 13 V

TJ = 25°C

11 V

10 V

8 V

7 V

VGE = 17 V to 13 V

TJ = 150°C

10 V

9 V

8 V

7 V

TJ = −55°C

10 V

9 V

7 V to 8 V

TJ = 25°C

TJ = 150°C

10,000

1.5

2.0

2.5

IC = 60 A

IC = 30 A

IC = 15 A

IC = 5 A

60

100

Cies

Coes

Cres

3.0

8

7

6

9 V

5

4

3

2

1

08

7

6

11 V

200

5

4

3

2

1

0

180

8

7

6

VGE = 17 V to 13 V

11 V

160

140

120

100

80

60

40

20

0

16

−25

25

75

125

175

160

140

120

100

80

60

40

20

0

180

160

140

120

100

80

60

40

20

0

160

140

120

100

80

60

40

20

0

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NGTB30N60FWG Datasheet(PDF) 4 Page - ON Semiconductor

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