DTS2315 datasheet(2/9 Pages) DINTEK

Part #	DTS2315

Description	P-Channel 20 V (D-S) MOSFET TrenchFET Power MOSFET

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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2

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 14

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

2.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.4

- 1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 10

µA

VDS = 0 V, VGS = ± 4.5 V

± 1

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 4.5 V

- 15

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 4 A

0.0465

0.0650



VGS = - 2.5 V, ID = - 4 A

0.0740

0.0900

VGS = - 1.8 V, ID = - 2 A

0.1135

0.1175

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 12V, ID = - 4.5 A

23.8

36

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A

13.8

21

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

3

Gate Resistance

Rg

f = 1 MHz

2.2

11

22



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 2.8 

ID  - 3.6 A, VGEN = - 4.5 V, Rg = 1 

22

33

ns

Rise Time

tr

21

32

Turn-Off Delay Time

td(off)

62

93

Fall Time

tf

14

21

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 2.8 

ID  - 3.6 A, VGEN = - 8 V, Rg = 1 

918

Rise Time

tr

612

Turn-Off Delay Time

td(off)

65

98

Fall Time

tf

15

23

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 1.4

A

Pulse Diode Forward Current

ISM

- 20

Body Diode Voltage

VSD

IS = - 3.6 A, VGS = 0 V

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C

13

20

ns

Body Diode Reverse Recovery Charge

Qrr

510

nC

Reverse Recovery Fall Time

ta

8

ns

Reverse Recovery Rise Time

tb

5

DTS2315

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