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DTS2312 Datasheet(PDF) 3 Page - DinTek Semiconductor Co,.Ltd |
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DTS2312 Datasheet(HTML) 3 Page - DinTek Semiconductor Co,.Ltd |
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3 / 9 page  3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 VGS =5Vthru2V VGS =1.5 V VGS =1V VDS - Drain-to-Source Voltage (V) 0.020 0.025 0.030 0.035 0.040 0.045 0 5 10 15 20 VGS =1.8 V VGS =4.5 V VGS =2.5 V ID - Drain Current (A) 0 1 2 3 4 5 0 2468 10 VDS =16V ID =3A VDS =10V VDS =5V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 TC = 25 °C TC =125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 300 600 900 1200 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.70 0.95 1.20 1.45 1.70 - 50 - 25 0 25 50 75 100 125 150 VGS = 2.5 V, I = 2.7 A VGS =4.5 V, ID =3.8A TJ - Junction Temperature (°C) D DT www.din-tek.jp |
Similar Part No. - DTS2312_13 |
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Similar Description - DTS2312_13 |
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