DT2300A datasheet(3/7 Pages) DINTEK

Part #	DT2300A

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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Preliminary

Mar 28, 2011

Main Characteristics

10

8

6

4

2

0

6

3

9

15

12

0.0001

0.001

0.01

1

0.1

0

0.5

1

1.5

2

2.5

3

0

0.2

0.4

0.6

0.8

1

0

50

100

150

0

3

6

9

12

15

0 0.5 1

1.5 2 2.5 3 3.5 4

Tc = 75°C

–25°C

25°C

VDS = 10 V

Pulse Test

0

1

1.5

0.5

–25

0

25

50

75 100 125 150

VDS = 10 V

Pulse Test

VDS = 10 V

Pulse Test

Tc = 75°C

25°C

–25°C

VGS = 0 V

Pulse Test

Tc = 25

°C

1.6 V

1.8 V

2.0 V

10 V

2.2 V

3 V

1.4 V

0.01

0.1

1

10

100

0.01

0.1

1

10

100

Ta = 25°C

1 Shot Pulse

100 μs

PW

= 100

ms

1 ms

10

ms

DC

Operation

ID = 10 mA

1 mA

0.1 mA

Ambient Temperature Ta (°C)

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics (1)

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics (2)

Gate to Source Voltage VGS (V)

Gate to Source Cutoff Voltage vs.

Case Temperature

Case Temperature Tc (°C)

*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)

Operation in this area

is limited by RDS(on)

DINDS0301EJ0400 Rev.4.00

Page 3 of 6

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DT2300A Datasheet(PDF) 3 Page - DinTek Semiconductor Co,.Ltd

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