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DTM9435 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTM9435 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
1 / 8 page 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 30 0.042 at VGS = - 10 V - 5.8 0.055 at VGS = - 6 V - 5.0 0.060 at VGS = - 4.5 V - 4.4 SD SD S D G D SO-8 5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 5.8 - 4.1 A TA = 70 °C - 4.6 - 3.2 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C PD 2.5 1.3 W TA = 70 °C 1.6 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 40 50 °C/W Steady State 70 95 Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30 www.din-tek.jp DTM9435 |
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