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DTM4606BDY Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd |
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DTM4606BDY Datasheet(HTML) 4 Page - DinTek Semiconductor Co,.Ltd |
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4 / 14 page  4 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 6 12 18 24 0 246 8 10 VGS =10 V thru 6 V VGS =4 V VGS =5 V VDS - Drain-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 12 14 16 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 02 46 ID =2.5 A VDS =22.5 V VDS =7.5 V VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 01 2 3 45 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 ID =6A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) www.din-tek.jp DTM4606BDY |
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