DTM4435_13 datasheet(2/8 Pages) DINTEK

Part #	DTM4435

Description	P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

Logo

2 / 8 page

2

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = - 250 μA

- 30

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 1.5

- 2.0

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = - 30 V

-

- 1

μA

VGS = 0 V

VDS = - 30 V, TJ = 125 °C

-

- 50

VGS = 0 V

VDS = - 30 V, TJ = 175 °C

-

- 150

On-State Drain Currenta

ID(on)

VGS = - 10 V

VDS- 5 V

- 30

-

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V

ID = - 8 A

-

0.013

0.016



VGS = - 10 V

ID = - 8 A, TJ = 125 °C

-

0.026

VGS = - 10 V

ID = - 8 A, TJ = 175 °C

-

0.030

VGS = - 4.5 V

ID = - 6 A

-

0.016

0.022

Forward Transconductanceb

gfs

VDS = - 15 V, ID = - 8 A

-

22

-

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = - 15 V, f = 1 MHz

-

1736

2170

pF

Output Capacitance

Coss

-

392

490

Reverse Transfer Capacitance

Crss

-

268

335

Total Gate Chargec

Qg

VGS = - 10 V

VDS = - 15 V, ID = - 4.6 A

-

38.3

58

nC

Gate-Source Chargec

Qgs

-5.9

-

Gate-Drain Chargec

Qgd

-9

-

Gate Resistance

Rg

f = 1 MHz

2

-

7



Turn-On Delay Timec

td(on)

VDD = - 15 V, RL = 15 

ID  - 1 A, VGEN = - 10 V, Rg = 1 

-

12.5

19

ns

Rise Timec

tr

-9

15

Turn-Off Delay Timec

td(off)

-

45.3

68

Fall Timec

tf

-10

15

Source-Drain Diode Ratings and Characteristicsb

Pulsed Currenta

ISM

--

- 60

A

Forward Voltage

VSD

IF = - 8 A, VGS = 0

-

- 0.84

- 1.2

V

www.din-tek.jp

DTM4435

Similar Part No. - DTM4435_13

Manufacturer	Part #	Datasheet	Description
DinTek Semiconductor Co...	DTM4435	305Kb / 8P	P-Channel 30 V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	DTM4435	1Mb / 5P	P-Channel MOSFET uses advanced trench technology

More results

Similar Description - DTM4435_13

Manufacturer	Part #	Datasheet	Description
DinTek Semiconductor Co...	DTM4407	2Mb / 9P	P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTL40P03	1Mb / 8P	P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTM4459	1Mb / 9P	P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTM4485	1Mb / 9P	P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTS3407	845Kb / 9P	P-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET
	DTM4953	1Mb / 9P	Dual P-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET
	DTM4953BDY	1Mb / 9P	Dual P-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET
	DTU90N03	1Mb / 8P	N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTP0403	1Mb / 7P	N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
	DTB3055	1Mb / 8P	N-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET

More results

DTM4435 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd

DTM4435 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd

Similar Part No. - DTM4435_13

Similar Description - DTM4435_13

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL