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BR24G08FJ-3TR Datasheet(PDF) 2 Page - Rohm |
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BR24G08FJ-3TR Datasheet(HTML) 2 Page - Rohm |
2 / 36 page Datasheet 2/33 BR24G08-3 09.Mar.2013 Rev.002 ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 www.rohm.com TSZ02201-0R2R0G100190-1-2 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V Power Dissipation Pd 450 (SOP8) mW Derate by 4.5mW/°C when operating above Ta=25°C 450 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 300 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 330 (TSSOP-B8) Derate by 3.3mW/°C when operating above Ta=25°C 310 (TSSOP-B8J) Derate by 3.1mW/°C when operating above Ta=25°C 310 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C 300 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C 800 (DIP-T8) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 ℃ Operating Temperature Topr -40 to +85 ℃ Input Voltage / Output Voltage ‐ -0.3 to VCC+1.0 V The Max value of Input voltage/ Output voltage is not over 6.5V. When the pulse width is 50ns or less the Min value of Input voltage/Output voltage is not below -0.8V. Junction Temperature Tjmax 150 ℃ Junction temperature at the storage condition Memory Cell Characteristics (Ta=25℃, VCC=1.6V to 5.5V) Parameter Limit Unit Min Typ Max Write Cycles (1) 1,000,000 - - Times Data Retention (1) 40 - - Years (1)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage VIN 0 to VCC DC Characteristics (Unless otherwise specified, Ta=-40℃ to +85℃, VCC=1.6V to 5.5V) Parameter Symbol Limit Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7V≦VCC≦5.5V Input Low Voltage1 VIL1 -0.3 (2) - +0.3VCC V 1.7V≦VCC≦5.5V Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6V≦VCC<1.7V Input Low Voltage2 VIL2 -0.3 (2) - 0.2VCC V 1.6V≦VCC<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5V≦VCC≦5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6V≦VCC<2.5V (SDA) Input Leakage Current ILI -1 - 1 µA VIN=0 to VCC Output Leakage Current ILO -1 - 1 µA VOUT=0 to VCC (SDA) Supply Current (Write) ICC1 - - 2.0 mA VCC=5.5V, fSCL=400kHz, tWR=5ms, Byte write, Page write Supply Current (Read) ICC2 - - 0.5 mA VCC=5.5V, fSCL=400kHz Random read, current read, sequential read Standby Current ISB - - 2.0 µA VCC=5.5V, SDA・SCL=VCC A0,A1,A2=GND,WP=GND (2) When the pulse width is 50ns or less, it is -0.8V. |
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