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TS9013XCWRP Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS9013XCWRP Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 5 page TS9013 500mA Low Quiescent Current CMOS LDO 2/5 Version: F11 Absolute Maximum Rating Parameter Symbol Limit Unit Input Supply Voltage VIN 12 V Recommend Operating Input Voltage VIN 10 V Output Current Io 500 mA Power Dissipation (without heat sink) SOT-89 PD 0.5 W SOT-223 0.7 Operating Junction Temperature Range Tj -40 ~ +150 oC Storage Temperature Range TSTG -65 ~ +150 oC Lead Soldering Temperature (260 oC) 5 S Notes: Stress above the listed absolute rating may cause permanent damage to the device. Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Conditions Min Typ Max Unit Output Voltage VIN=Vo + 1V, Io =1mA, TS90135 4.90 5.0 5.10 V TS9013S 3.23 3.3 3.36 TS9013K 2.45 2.5 2.55 TS9013D 1.76 1.8 1.83 VIN=Vo + 1V, Io =1mA ~ 500mA TS90135 4.85 5.0 5.10 V TS9013S 3.20 3.3 3.36 TS9013K 2.42 2.5 2.55 TS9013D 1.74 1.8 1.83 Maximum Output Current VIN=Vo+1V, 500 -- -- mA Input Stability VO+1V ≤ Vin ≤ V O+2V, Io=1mA -- 0.2 0.3 % Load Regulation (Note1) VIN=Vo+1V, 1mA ≤ IL ≤ 500mA TS90135 -- 40 80 mV TS9013S VIN=Vo+1V, 1mA ≤ IL ≤ 500mA TS9013K -- 40 90 TS9013D Dropout Voltage (Note 2) Io=300mA TS90135 -- 300 500 mV TS9013S Io=500mA TS90135 -- 500 600 TS9013S Io=500mA TS9013K -- 600 850 TS9013D Quiescent Current VIN=Vo+1V, Io=0A -- 15 25 uA Output Current Limit VOUT < 0.4V 550 -- -- mA Power Supply Rejection Ratio At f=100KHz, Io=10mA -- 30 -- dB Output Voltage Temperature Coefficient (Note 3) -- 100 -- ppm/ oC Notes: a. Regulation is measured at constant junction temperature, using pulsed ON time. b. Dropout is measured at constant junction temperature, using pulsed ON time, and the criterion is VOUT inside target value +/-3%. |
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