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MJD44H11T4-A Datasheet(PDF) 3 Page - STMicroelectronics |
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MJD44H11T4-A Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page MJD44H11T4-A, MJD45H11T4-A Electrical characteristics Doc ID 16095 Rev 1 3/8 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Note: For PNP types voltage and current values are negative. 2.1 Typical characteristic (curves) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. Collector-emitter sustaining voltage (IB = 0) IC = 30 mA 80 - V ICES Collector cut-off current (VBE = 0) VCE = 80 V - 10 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 50 µA VCE(sat) (1) Collector-emitter saturation voltage IC = 8 A IB = 0.4 A - 1 V VBE(sat) (1) Base-emitter saturation voltage IC = 8 A IB = 0.8 A - 1.5 V hFE (1) DC current gain IC = 2 A_ VCE = 1 V 60 - IC = 4 A_ _ VCE = 1 V 40 - Figure 2. Safe operating area Figure 3. Derating curves |
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