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STW26NM60N Datasheet(PDF) 5 Page - STMicroelectronics |
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STW26NM60N Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 23 page STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics Doc ID 15642 Rev 5 5/23 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 10 A 0.135 0.165 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1800 115 1.1 - pF pF pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 310 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V, (see Figure 19) - 60 8.5 30 - nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain -2.8 - Ω Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 10 A RG =4.7 Ω VGS = 10 V (see Figure 18) - 13 25 85 50 - ns ns ns ns |
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