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STD5N52U Datasheet(PDF) 4 Page - STMicroelectronics

Part # STD5N52U
Description  N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD5N52U Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD5N52U, STF5N52U, STI5N52U
4/18
Doc ID 15684 Rev 2
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
525
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 525 V
VDS = 525 V, TC=125 °C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.2 A
1.28
1.5
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
529
71
13.4
-
pF
pF
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 420 V, VGS = 0
-
11
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
6
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 416 V, ID = 4.4 A,
VGS = 10 V
(see Figure 17)
-
16.9
4.2
8.4
-
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
-
11.4
13.6
23.1
15
-
ns
ns
ns
ns


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