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HS0-303CEH-Q Datasheet(PDF) 5 Page - Intersil Corporation |
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HS0-303CEH-Q Datasheet(HTML) 5 Page - Intersil Corporation |
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5 / 10 page  HS-303CEH 5 FN8399.1 April 19, 2013 Post Radiation Characteristics VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to total ionizing dose (low dose radiation). TA= +25°C. SYMBOL PARAMETER TEST CONDITIONS 0k 25k 50k 75k 100k UNITS +rDS(ON) “Switch On” Resistance VD = 10V, IS = -10mA 33.57 34.39 34.37 34.75 34.65 Ω -rDS(ON) “Switch On” Resistance VD = -10V, IS = 10mA 27.56 28.37 28.48 28.92 28.77 Ω +IS(OFF) Leakage Current into Source of an “OFF” Switch VS = +14V, VD = -14V -0.30 -0.26 -0.36 -0.55 -0.47 nA VS = +15V, VD = -15V -0.006 -0.002 -0.002 -0.003 -0.002 µA -IS(OFF) Leakage Current into Source of an “OFF” Switch VS = -14V, VD = +14V 0.32 0.45 0.75 1.05 0.94 nA VS = -15V, VD = +15V 0.004 0.003 0.003 0.003 0.002 µA +ID(OFF) Leakage Current into Drain of an “OFF” Switch VS = +14V, VD = -14V -0.36 -0.22 -0.25 -0.46 -0.40 nA VS = +15V, VD = -15V -0.001 -0.001 -0.001 -0.001 -0.002 µA -ID(OFF) Leakage Current into Drain of an “OFF” Switch VS = -14V, VD = +14V 0.34 0.43 0.69 1.02 0.92 nA VS = -15V, VD = +15V 0.0004 0.0008 0.0011 0.0014 0.0018 µA +ID(ON) Leakage Current from an “ON” Driver into the Switch (Drain and Source) VS = +14V, VD = +14V -0.25 -0.26 -0.36 -0.55 -0.65 nA -ID(ON) Leakage Current from an “ON” Driver into the Switch (Drain and Source) VS = -14V, VD = -14V 0.17 0.15 0.26 0.45 0.40 nA IAL Low Level Input Address Current All Channels VA = 0.8V 0.19 0.30 0.23 0.71 0.48 nA IAH High Level Input Address Current All Channels VA = 4.0V 1.72 0.87 0.83 0.28 1.31 nA I+ Positive Supply Current All Channels VA = 0.8V 54 51 50 49 50 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V 185 146 129 116 106 µA I- Negative Supply Current All Channels VA = 0.8V -0.011 -0.015 -0.011 -0.019 -0.022 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V -0.013 -0.016 -0.017 -0.019 -0.014 µA tOPEN Break-Before-Make Time Delay RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V 42.58 50.84 55.63 56.74 58.06 ns tON Switch Turn “ON” Time RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 221.03 229.24 240.85 249.79 256.37 ns tOFF Switch Turn “OFF” Time RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 188.62 184.65 182.27 184.06 182.45 ns |
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