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DMG4511SK4-7 Datasheet(PDF) 7 Page - Diodes Incorporated

Part # DMG4511SK4-7
Description  This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG4511SK4-7 Datasheet(HTML) 7 Page - Diodes Incorporated

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DMG4511SK4
Document number: DS32042 Rev. 4 - 2
7 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
I = -250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 19 Diode Forward Voltage vs. Current
-V
, SOURCE-DRAIN VOLTAGE (V)
SD
T = 25°C
A
0
200
400
600
800
1,000
1,200
1,400
0
5
10
15
20
25
30
35
Fig. 20 Typical Total Capacitance
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Ciss
Crss
C
oss
f = 1MHz
510
15
20
25
30
35
Fig. 21 Typical Leakage Current vs. Drain-Source Voltage
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
Fig. 22 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
T - T = P * R
(t)
Duty Cycle, D = t /t
JA
JA
12
θ
R
(t) = r(t) *
θJA
R
R
= 80°C/W
θ
θ
JA
JA
P(pk)
t1
t
2
0.001
0.01
0.1
1
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5


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