STW57N65M5-4 datasheet(5/14 Pages) STMICROELECTRONICS

Part #	STW57N65M5-4

Description	N-channel 650 V, 0.056 廓 typ., 42 A, MDmesh??V Power MOSFET in a TO247-4 package

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STW57N65M5-4

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(V)

Voltage delay time

VDD = 400 V, ID = 28 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

(see Figure 20)

-79

-

ns

tr(V)

Voltage rise time

-

9

-

ns

tf(i)

Current fall time

-

8

-

ns

tc(off)

Crossing time

-

14

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

42

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

168

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 42 A, VGS = 0

-

1.5

V

trr

Reverse recovery time

ISD = 42 A,

di/dt = 100 A/µs

VDD = 100 V (see Figure 17)

-

418

ns

Qrr

Reverse recovery charge

-

8

µC

IRRM

Reverse recovery current

-

40

A

trr

Reverse recovery time

ISD = 42 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17)

-

528

ns

Qrr

Reverse recovery charge

-

12

µC

IRRM

Reverse recovery current

-

44

A

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