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| MMT10V275 |
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 MOTOROLA
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3 page 
MMT10V275 MMT10V400 3 Motorola Thyristor Device Data Figure 2. Typical Holding Current TJ, JUNCTION TEMPERATURE (°C) 80 70 60 50 40 30 20 10 0 600 550 500 450 400 350 300 250 200 Figure 3. Holding Current Temperature Coefficient IH, HOLDING CURRENT AT 0°C (mA) 250 200 0 – 1 – 2 – 3 – 4 300 400 350 450 550 500 600 TYPICAL LOW TYPICAL Figure 4. Normalized Maximum 60 Hz VBO versus Junction Temperature TJ, JUNCTION TEMPERATURE (°C) 140 120 100 80 60 40 20 0 – 20 1.2 1.15 0.9 Figure 5. Temperature Dependence of 60 Hz Breakover Current TJ, JUNCTION TEMPERATURE PRIOR TO TEST (°C) 10 1 0.1 1.1 1.05 1 0.95 The thermal coefficient of VF(BR) is similar to that of a zener diode. IBO falls with temperature, reducing the zener impedance contribution to V BO. This causes the V BO temperature coefficient perature to be less than or equal to the VF(BR) coefficient. The graph allows the estimation of the maximum voltage rise of either parameter. NORMALIZED TO 25 °C 140 120 100 80 60 40 20 0 – 40 – 20 160 Note: The behavior of the breakover current during AC operation is complex, due to junction heating, case heating and thermal interaction between the device halves. Microplasma conduction at the beginning of breakdown sometimes results in higher local current densities and earlier than predicted switching. This reduces power dissipation and stress on the device. MAXIMUM IBO = 1.0 A at 25 °C MINIMUM IBO UNIT FIRST HALF–CYCLE f = 60 Hz VOC = 1000 V (rms) IOC = 1.0 A (rms) |
