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HY12N65T Datasheet(PDF) 1 Page - HY ELECTRONIC CORP. |
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HY12N65T Datasheet(HTML) 1 Page - HY ELECTRONIC CORP. |
1 / 4 page PAGE . 1 REV1.0 : AUG. 2011 HY12N65T / HY12N65FT Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low C RSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Marking & Ordering Information N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (T C=25 OC unless otherwise noted ) 650V / 12A 650V, R DS(ON)=0.8 Ω @V GS=10V, ID=6.0A Thermal Characteristics COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE Note : 1. Maximum DC current limited by the package Drain Gate Source 1 2 3 1 G 2 D 3 S 1 G 2 D 3 S TO-220AB ITO-220AB TYPE MARKING PACKAGE PACKING HY12N65T 12N65T TO-220AB 50PCS/TUBE HY12N65FT 12N65FT ITO-220AB 50PCS/TUBE P a ra me te r S ymb o l HY1 2 N6 5 T HY1 2 N6 5 F T Uni ts D r a i n-S o ur c e Vo lta g e V D S 6 5 0 V Ga te - S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urr e nt T C = 2 5 O C I D 1 2 1 2 A P uls e d D r a i n C ur re nt 1) I D M 4 8 4 8 A Ma xi mum P o we r D i s s i p a ti o n D e r a ti ng F a c to r T C = 2 5 O C P D 1 7 5 1 .4 5 2 0 .4 2 W Avalanche Energy with Single Pulse I AS=12A, VDD=90V, L=10.5m Η E A S 7 6 0 mJ Op e r a ti ng J unc ti o n a nd S to ra g e Te mp e r a ture Ra ng e T J , T S TG -5 5 to +1 5 0 OC PA R A M E TE R S ym b o l H Y1 2 N6 5 T HY1 2 N 6 5 F T U ni ts Junction-to-Case Thermal Resistance R θ J C 0 .7 2 .4 O C / W Junction-to Ambient Thermal Resistance R θ J A 6 2 .5 1 0 0 O C / W Gate |
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