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MMSF7P03HD Datasheet(PDF) 5 Page - Motorola, Inc |
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MMSF7P03HD Datasheet(HTML) 5 Page - Motorola, Inc |
5 / 10 page MMSF7P03HD 5 Motorola TMOS Power MOSFET Transistor Device Data Q2 Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance QG, TOTAL GATE CHARGE (nC) 30 0 3.0 1.0 0 100 1.0 RG, GATE RESISTANCE (OHMS) 1000 100 1.0 5.0 10 15 20 25 2.0 4.0 5.0 10 TJ = 25°C ID = 7.0 A VDD = 15 V VGS = 10 V td(on) VGS VDS TJ = 25°C ID = 7.0 A 30 10 0 20 Q1 Q3 td(off) tf tr 40 6.0 7.0 35 QT 10 DRAIN–TO–SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using it as a freewheeling or commutating diode. Of particular interest are the reverse re- covery characteristics which play a major role in determining switching losses, radiated noise, EMI and RFI. System switching losses are largely due to the nature of the body diode itself. The body diode is a minority carrier de- vice, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 11. It is this stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. Obviously, repeatedly forcing the diode through reverse recovery further increases switching losses. Therefore, one would like a diode with short trr and low QRR specifications to minimize these losses. The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ring- ing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high di/dts. The diode’s negative di/dt during ta is directly con- trolled by the device clearing the stored charge. However, the positive di/dt during tb is an uncontrollable diode charac- teristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ratio of tb/ta serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have less stored charge and a softer reverse re- covery characteristic. The softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell MOSFET diode without increasing the current ringing or the noise gen- erated. In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. Figure 10. Diode Forward Voltage versus Current VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) 0.55 0.50 5.0 1.0 0 0.70 0.80 0.90 TJ = 25°C VGS = 0 V 2.0 3.0 4.0 0.60 6.0 0.65 0.75 0.85 0.95 |
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