Symbol

Min.

Typ.

Max.

Units

650

-

-

V

2.0

-

4.0

V

-

4.1

4.6

W

-

-

10

uA

-

-

+100

nA

Qg

-

6.4

8.6

Qgs

-

1.8

-

Qgd

-

2.1

-

-

13.2

16

-

18.6

28

-

22

38

-

16.8

32

-

265

-

-

36

-

-

1.5

-

-

-

2.0

A

-

-

8.0

A

-

-

1.4

V

-

190

-

ns

-

1.0

-

uC

NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%

Source-Drain Diode

di/dt=100A/us

-

-

Max. Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Turn-Off Delay Time

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Reverse Recovery Charge

Max. Diode Forwad Voltage

pF

Static

Zero Gate Voltage Drain Current

Gate Body Leakage Current

Gate-Drain Charge

Dynamic

nC

Turn-On Delay Time

Turn-On Rise Time

ns

HY2N65D / HY2N65M

Test Condition

Paramter

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Total Gate Charge

Gate-Source Charge

PAGE.2

REV 1.0, 20-Sept-2012