MMSF7N03HD datasheet(3/10 Pages) MOTOROLA

Part #	MMSF7N03HD

Description	SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS

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Manufacturer	MOTOROLA [Motorola, Inc]

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MMSF7N03HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.25

0.5

0.75

2

0

4

5

7

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1.5

2

2.5

4

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2

4

10

0.4

0.5

0.6

0

5

10

15

0.01

0.04

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

1

1.5

2

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VDS ≥ 10 V

TJ = 100°C

25

°C

– 55

°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

VGS = 4.5 V

VGS = 10 V

ID = 3.5 A

1

1.25

4.5 V

3.9 V

3.1 V

2.9 V

3

1.5

1.75

3.5

0.3

6

8

10 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

6

0.05

0.03

3

0

0.5

5

10

20

30

4

5

7

6

3

0.2

0.02

10

100

°C

25

°C

ID = 3.5 A

3.7 V

3.5 V

3.3 V

2.7 V

2.5 V

2

1

TJ = 25°C

2

1

0.1

TJ = 25°C

0.1

10000

15

25

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