XC7SET14GW datasheet(5/14 Pages) PHILIPS

Part #	XC7SET14GW

Description	High-speed Si-gate CMOS device, an inverting buffer function with Schmitt trigger action

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Manufacturer	PHILIPS [NXP Semiconductors]

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5 / 14 page

XC7SET14_1

Product data sheet

Rev. 01 — 31 August 2009

5 of 14

NXP Semiconductors

XC7SET14

Inverting Schmitt trigger

11.1 Transfer characteristics

12. Dynamic characteristics

[1]

tpd is the same as tPLH and tPHL.

[2]

Typical values are measured at VCC = 5.0 V.

[3]

CPD is used to determine the dynamic power dissipation PD (µW).

PD =CPD × VCC2 × fi + ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V.

Table 8.

Transfer characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Figure 7 and Figure 8.

Symbol Parameter

Conditions

25

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

VT+

positive-going

threshold

voltage

VCC = 4.5 V

-

2.0

-

2.0

-

2.0

V

VCC = 5.5 V

-

2.0

-

2.0

-

2.0

V

VT−

negative-going

threshold

voltage

VCC = 4.5 V

0.5

-

0.5

-

0.5

-

V

VCC = 5.5 V

0.6

-

0.6

-

0.6

-

V

VH

hysteresis

voltage

VCC = 4.5 V

0.4

-

1.4

0.4

1.4

0.35

1.4

V

VCC = 5.5 V

0.4

-

1.6

0.4

1.6

0.35

1.6

V

Table 9.

Dynamic characteristics

GND = 0 V. For waveform see Figure 5. For test circuit see Figure 6.

Symbol Parameter

Conditions

25

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

tpd

propagation

delay

A to Y;

VCC = 4.5 V to 5.5 V

[1]

[2]

CL = 15 pF

-

4.1

7.0

1.0

8.0

1.0

9.0

ns

CL = 50 pF

-

5.9

8.5

1.0

10.0

1.0

11.0

ns

CPD

power

dissipation

capacitance

per buffer;

VI = GND to VCC

[3]

-13-

-

pF

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