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XC7SET14GW Datasheet(PDF) 5 Page - NXP Semiconductors |
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XC7SET14GW Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page XC7SET14_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 31 August 2009 5 of 14 NXP Semiconductors XC7SET14 Inverting Schmitt trigger 11.1 Transfer characteristics 12. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. [2] Typical values are measured at VCC = 5.0 V. [3] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V. Table 8. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Figure 7 and Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max VT+ positive-going threshold voltage VCC = 4.5 V - - 2.0 - 2.0 - 2.0 V VCC = 5.5 V - - 2.0 - 2.0 - 2.0 V VT− negative-going threshold voltage VCC = 4.5 V 0.5 - - 0.5 - 0.5 - V VCC = 5.5 V 0.6 - - 0.6 - 0.6 - V VH hysteresis voltage VCC = 4.5 V 0.4 - 1.4 0.4 1.4 0.35 1.4 V VCC = 5.5 V 0.4 - 1.6 0.4 1.6 0.35 1.6 V Table 9. Dynamic characteristics GND = 0 V. For waveform see Figure 5. For test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max tpd propagation delay A to Y; VCC = 4.5 V to 5.5 V [1] [2] CL = 15 pF - 4.1 7.0 1.0 8.0 1.0 9.0 ns CL = 50 pF - 5.9 8.5 1.0 10.0 1.0 11.0 ns CPD power dissipation capacitance per buffer; VI = GND to VCC [3] -13- - - - - pF |
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