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X00619MA1AA2 Datasheet(PDF) 2 Page - STMicroelectronics |
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X00619MA1AA2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  Characteristics X00619 2/10 Doc ID 15755 Rev 2 1 Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise specified) Symbol Parameter Value Unit IT(RMS) On-state rms current (180 °Conduction angle) TO-92 TL = 83 °C 0.8 A SOT-223 Tc = 107 °C IT(AV) Average on-state current (180 °Conduction angle) TO-92 TL = 83 °C 0.5 A SOT-223 Tc = 107 °C ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 10 A tp = 10 ms 9 I²tI²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2s di/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C Table 3. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value Unit IGT VD = 12 V, RL = 140 Ω MIN. 30 µA MAX. 200 VGT 0.8 V VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ Tj = 125 °C MIN. 0.2 V VRG IRG = 10 µA MIN. 5 V IH IT = 50 mA, RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA, RGK = 1 kΩ MAX. 6 mA dV/dt VD = 67% VDRM, RGK = 1 kΩ Tj = 125 °C MIN. 40 V/µs Table 4. Static electrical characteristics Symbol Test conditions Value Unit VTM ITM = 1 A, tp = 380 µs Tj = 25 °C MAX 1.35 V VTO Threshold voltage Tj = 125 °C 0.85 V Rd Dynamic resistance 245 m Ω IDRM IRRM VDRM = VRRM, RGK = 1 kΩ Tj = 25 °C 1 µA Tj = 125 °C 100 µA |
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