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2N5551 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N5551 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 2N5551- MMBT5551 Rev. B tm April 2006 2N5551- MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a=25°C unless otherwise noted * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C Symbol Parameter Max Units 2N5551 *MMBT5551 PD Total Device Dissipation Derate above 25 °C 625 5.0 350 2.8 mW mW/ °C RθJA Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W 1. Base 2. Emitter 3. Collector SOT-23 1 2 3 Marking: 3S 2N5551 MMBT5551 TO-92 |
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