MMG05N60D

2

Motorola Power Products Division Technical Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

BVCES

600

—

680

0.7

—

—

Vdc

V/

°C

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)

ICES

ICES

—

—

0.1

5.0

5.0

50

µAdc

Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)

IGES

—

10

100

mAdc

ON CHARACTERISTICS

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)

VCE(on)

—

—

1.6

1.5

2.0

—

Vdc

Gate Threshold Voltage

(VCE = VGE, IC = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGE(th)

3.5

—

—

6.0

6.0

—

Vdc

mV/

°C

Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)

gfe

0.3

0.42

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

20 Vdc V

0 Vdc

Cies

—

75

100

pF

Output Capacitance

(VCE = 20 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

Coes

—

11

20

Transfer Capacitance

f = 1.0 MHz)

Cres

—

1.6

5.0

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 0.3 Adc, TC = 25°C)

(IEC = 0.3 Adc, TC = 125°C)

(IEC = 0.1 Adc, TC = 25°C)

(IEC = 0.1 Adc, TC = 125°C)

VFEC

—

—

—

—

5.0

5.2

2.3

2.3

6.0

—

3.0

—

Vdc

Reverse Recovery Time @ TC = 25°C

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

trr

—

150

—

ns

Reverse Recovery Stored Charge

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

QRR

—

35

—

mC

SWITCHING CHARACTERISTICS (1)

Turn–Off Delay Time

(VCC = 300 Vdc, IC = 0.4 Adc,

V15 Vd

L

3 0

H R

25

Ω

td(off)

—

28

—

ns

Fall Time

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

TC = 25°C, dV/dt = 1000 V/ms)

tf

—

150

—

Turn–Off Switching Loss

TC = 25 C, dV/dt = 1000 V/ms)

Energy losses include “tail”

Eoff

—

3.25

4.25

mJ

Turn–Off Delay Time

(VCC = 300 Vdc, IC = 0.4 Adc,

V15 Vd

L

3 0

H R

25

Ω

td(off)

—

21

—

ns

Fall Time

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

TC = 125°C, dV/dt = 1000 V/ms)

tf

—

280

—

Turn–Off Switching Loss

TC = 125 C, dV/dt = 1000 V/ms)

Energy losses include “tail”

Eoff

—

8.0

10

mJ

Gate Charge

(VCC = 300 Vdc, IC = 0.3 Adc,

VGE = 15 Vdc)

QT

—

6.4

—

nC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.