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MMFT1N10 Datasheet(PDF) 4 Page - Motorola, Inc |
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MMFT1N10 Datasheet(HTML) 4 Page - Motorola, Inc |
4 / 10 page MMFT1N10E 4 Motorola TMOS Power MOSFET Transistor Device Data FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain–to–source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on an ambient temperature of 25 °C and a maximum junction temperature of 150 °C. Limitations for re- petitive pulses at various ambient temperatures can be de- termined by using the thermal response curves. Motorola Application Note, AN569, “Transient Thermal Resistance– General Data and Its Use” provides detailed instructions. SWITCHING SAFE OPERATING AREA The switching safe operating area (SOA) is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, BVDSS. The switching SOA is applicable for both turn–on and turn–off of the devices for switching times less than one microsecond. Figure 7. Maximum Rated Forward Biased Safe Operating Area VGS = 20 V SINGLE PULSE TA = 25°C 10 0.1 1 0.1 0.01 0.001 1 10 100 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) DC 20 ms 1 s 500 ms 100 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT Figure 8. Thermal Response 1.0 0.1 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) 0.1 0.01 0.2 0.02 0.01 D = 0.5 SINGLE PULSE 0.05 R θJA(t) = r(t) RθJA R θJA = 156°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TA = P(pk) R θJA(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0E+01 COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated source–drain current versus re–applied drain voltage when the source–drain diode has undergone forward bias. The curve shows the limita- tions of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 9 are present. Full or half–bridge PWM DC motor controllers are common applications requiring CSOA data. Device stresses increase with increasing rate of change of source current so dIS/dt is specified with a maximum value. Higher values of dIS/dt require an appropriate derating of IFM, peak VDS or both. Ultimately dIS/dt is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain–to–source voltage that the device must sustain during commutation; IFM is the maximum forward source–drain diode current just prior to the onset of commutation. VR is specified at 80% rated BVDSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero. RGS should be minimized during commutation. TJ has only a second order effect on CSOA. Stray inductances in Motorola’s test circuit are assumed to be practical minimums. dVDS/dt in excess of 10 V/ns was at- tained with dIS/dt of 400 A/µs. |
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