Data Sheet, Rev. 1

September 2001

Isolated Laser Module (EM-ILM)

E2500-Type 2.5 Gbits/s Electroabsorption Modulated

Agere Systems Inc.

3

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-

lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess

of those given in the operations section of the data sheet. Exposure to absolute maximum ratings for extended

periods can adversely affect device reliability.

Characteristics

Parameter

Conditions

Limit

Unit

Laser Diode Reverse Voltage

CW

2

V

Laser Diode Forward Current

CW

150

mA

Optical Output Power

CW

10

mW

Modulator Reverse Voltage

—

5

V

Modulator Forward Voltage

—

1

V

Monitor Diode Reverse Voltage

—

10

V

Monitor Diode Forward Current

—

1

mA

Storage Temperature Range

—

°C

Operating Temperature Range

—

0 to 70

°C

Table 2. Optical and Electrical Specifications

Parameter

Symbol

Conditions

Min Max

Unit

°C to 35 °C, except where noted.

Threshold Current (BOL)

535

mA

Forward Voltage

—2.0

V

Operating Current

50

100

mA

Threshold Power

—80

µW

Fiber Output Power (peak)

1—

dBm

Peak Wavelength (wavelength can be

specified to the ITU-T wavelength chan-

nels)

λ0

1530 1563

nm

Side-mode Suppression Ratio

SMSR

30

—

dB

Time Resolved Spectroscopy (chirp),

E2505 Series

2.5 Gbits/s

—0.25

Å

Time Resolved Spectroscopy (chirp),

E2502 Series

2.5 Gbits/s

—0.15

Å

Dispersion Penalty

DP

2.5 Gbits/s

360 km (E2505)

600 km (E2502)

—2.0

dB