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ATTL7583DF Datasheet(PDF) 4 Page - Agere Systems |
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ATTL7583DF Datasheet(HTML) 4 Page - Agere Systems |
4 / 20 page 4 Lucent Technologies Inc. Data Sheet February 2001 L7583A/B/C/D Line Card Access Switch Handling Precautions Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo- sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro- tection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500 Ω, capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD thresh- old presented here was obtained by using these circuit parameters. Table 3. HBM ESD Threshold Voltage Electrical Characteristics TA = –40 °C to +85 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information purposes only and are not part of the test- ing requirements. Table 4. Power Supply Specifications *VBAT is used only as a reference for internal protection circuitry. If VBAT rises above –10 V, the device will enter an all OFF state and remain in this state until the battery voltage drops below –15 V. Table 5. Test In Switches, 1 and 2 * Applied voltage is 100 Vp-p square wave at 100 Hz. Device Rating L7583 1000 V Supply Min Typ Max Unit Supply Min Typ Max Unit VDD 4.5 5 5.5 V VBAT* –19 — –72 V Parameter Test Condition Measure Min Typ Max Unit OFF-state Leakage Current: +25 °C +85 °C –40 °C Vswitch (differential) = –320 V to Gnd Vswitch (differential) = –60 V to +260 V Vswitch (differential) = –330 V to Gnd Vswitch (differential) = –60 V to +270 V Vswitch (differential) = –310 V to Gnd Vswitch (differential) = –60 V to +250 V Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA ON-resistance: +25 °C +85 °C –40 °C Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA ∆ VON ∆ VON ∆ VON — — — 45 — 33 — 70 — Ω Ω Ω Isolation: +25 °C +85 °C –40 °C Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA dV/dt Sensitivity* —— — 200 — V/µs |
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