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ACT-D1M32T-120F14M Datasheet(PDF) 4 Page - Aeroflex Circuit Technology |
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ACT-D1M32T-120F14M Datasheet(HTML) 4 Page - Aeroflex Circuit Technology |
4 / 9 page Aeroflex Circuit Technology SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700 4 VPP Deep Power Down Current IPPD RP = GND ± 0.2V 40 40 µA VPP Read Current IPPR VPP > VPPH2 800 800 µA VPP Write Current IPPW1 VPP = VPPH1 (at 5V), Word Write in Progress (x32) 120 120 mA IPPW2 VPP = VPPH2 (at 12V), Word Write in Progress (x32) 100 100 mA VPP Erase Current IPPE1 VPP = VPPH1 (at 5V), Block Erase in Progress 120 100 mA IPPE2 VPP = VPPH2 (at 12V), Block Erase in Progress 100 80 mA VPP Erase Suspend Current IPPES VPP = VPPH, Block Erase Suspend in Progress 800 800 µA RP Boot Block Unlock Current IRP RP = VHH, VPP = 12V 2 2 mA Output Low Voltage VOL VCC = VCCMin., IOL = 5.8 mA (5V), 2 mA (3.3V) 0.45 0.45 V Output High Voltage VOH1 VCC = VCCMin., IOH = -2.5 mA 0.85 x VCC 0.85 x VCC V VOH2 VCC = VCCMin., IOH = -100 µA VCC - 0.4V VCC - 0.4V V VPP Lock-Out Voltage VPPLK Complete Write Protection 0.0 1.5 0.0 1.5 V VPP (Program/Erase Operations) VPPH1 VPP = at 5V 4.5 5.5 4.5 5.5 V VPP (Program/Erase Operations) VPPH2 VPP = at 12V 11.4 12.6 11.4 12.6 V VCC Erase/Write Lock Voltage VLKO Locked Condition 0 2.0 0 2.0 V RP Unlock Voltage VHH Boot Block Write/Erase, VPP = 12V 11.4 12.6 11.4 12.6 V Notes: 1. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not tested). AC Characteristics – Write/Erase/Program Operations – WE Controlled (TA = -55 °C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified) Parameter Symbol JEDEC Standard +3.3V VCC (2) Typical +4.5V to +5.5V VCC Units 120nS Min Max 80nS Min Max 100nS Min Max 120nS Min Max Write Cycle Time tAVAV 120 80 100 120 nS RP High Recovery to WE Going Low tPHWL 1.5 .45 .45 .45 µS CE Setup to WE Going Low tELWL 0 0 0 0 nS Boot Block Unlock Setup to WE Going High(1) tPHHWH 200 100 100 100 nS VPP Setup to WE Going High (1) tVPWH 200 100 100 100 nS Address Setup to WE Going High tAVWH 90 60 60 60 nS Data Setup to WE Going High tDVWH 70 60 60 60 nS WE Pulse Width tWLWH 90 60 60 60 nS Data Hold Time from WE High tWHDX 0 0 0 0 nS Address Hold Time from WE High tWHAX 0 0 0 0 nS CE Hold Time from WE High tWHEH 0 0 0 0 nS WE Pulse Width High tWHWL 30 20 20 20 nS Duration of Word Write Operation (1) (x32) tWHQV1 6 6 6 6 µS Duration of Erase Operation (Boot) (1) tWHQV2 0.3 0.3 0.3 0.3 Sec Duration of Erase Operation (Parameter) (1) tWHQV3 0.3 0.3 0.3 0.3 Sec Duration of Erase Operation (Main) (1) tWHQV4 0.6 0.6 0.6 0.6 Sec VPP Hold from Valid SRD (1) tQVVL 0 0 0 0 nS RP VHH Hold from Valid SRD (1) tQVPH 0 0 0 0 nS Boot Block Lock Delay (1) tPHBR 200 100 100 100 nS Notes: 1. Guaranteed by design, not tested. 2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not tested). DC Characteristics – CMOS Compatible (TA = -55 °C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified) Parameter Sym Conditions +3.3V VCC (1) Typical +5.0V VCC Standard Units Min Max Min Max |
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