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EWT801-S

Rev. 04

Rev. 04

29. November. 2011

29. November. 2011

www.seoulsemicon.com

www.seoulsemicon.com

3. Electro-Optical characteristics

-

-0.22

-

I

Temperature coefficient of Y

-10℃≤ T ≤ 100 ℃

-

-0.20

-

I

Temperature coefficient of X

-10℃≤ T ≤ 100 ℃

mV/℃

-

-2.64

-

I

-10℃≤ T ≤ 100 ℃

lm/cd

3.1

3.0

I

Luminous Intensity Phi V / IV

℃

/ W

-

180

-

I

Rth JS

mlm

-

5040

-

I

Φ

V

Luminous Flux

lm/W

-

74.1

-

I

η

op

Optical Efficiency

deg.

-

120

-

I

1/2

Y

-

-

0.31

I

X

0.30

I

℃

/ W

-

360

-

I

Rth JA

mcd

2240

1680

1120

I

I

V

V

4.0

3.4

2.7

I

V

F

Unit

Max

Typ

Min

Condition

Symbol

Parameter

*1. A tolerance of ±0.05V on forward voltage measurements

*2. 99% yield of forward voltage is 2.8 ~ 3.8V

*3. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with

the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%

*4. Color difference between luminous flux and luminous intensity is Color difference : ± 0.01

*5 2

*6. Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point