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ACT-SF41632N-39P1I Datasheet(PDF) 1 Page - Aeroflex Circuit Technology |
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ACT-SF41632N-39P1I Datasheet(HTML) 1 Page - Aeroflex Circuit Technology |
1 / 11 page FEATURES eroflex Circuit Technology - Advanced Multichip Modules © SCD3851 REV A 5/21/98 F I E I D C E R T F L E X L A ISO 9001 CIRCUIT TECHNOLOGY www.aeroflex.com s 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM s Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash) s Organized as 128K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus s Low Power CMOS s Input and Output TTL Compatible Design s MIL-PRF-38534 Compliant MCMs Available s Decoupling Capacitors and Multiple Grounds for Low Noise s Commercial, Industrial and Military Temperature Ranges s Industry Standard Pinouts s TTL Compatible Inputs and Outputs s Packaging – Hermetic Ceramic q 66–Lead, PGA-Type, 1.385"SQ x 0.245"max, Aeroflex code# "P1,P5 with/without shoulders)" q 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) FLASH MEMORY FEATURES s Sector Architecture (Each Die) q 8 Equal Sectors of 64K bytes each q Any combination of sectors can be erased with one command sequence. s +5V Programing, +5V Supply s Embedded Erase and Program Algorithms s Hardware and Software Write Protection s Page Program Operation and Internal Program Control Time. s 10,000 Erase/Program Cycles Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2) ACT-SF41632 High Speed Multichip Module 128Kx32 SRAM / 512Kx32 Flash OE FWE1 SCE I/O8-15 I/O16-23 I/O0-7 I/O24-31 512K X 8 FLASH A0–A18 128K X 8 SRAM 512K X 8 FLASH 128K X 8 SRAM 512K X 8 FLASH 128K X 8 SRAM 512K X 8 FLASH 128K X 8 SRAM FCE SWE1 FWE2 SWE2 FWE3 SWE3 FWE4 SWE4 PIN DESCRIPTION I/O0-31 Data I/O A0–18 Address Inputs FWE1-4 Flash Write Enables SWE1-4 SRAM Write Enables FCE Flash Chip Enable SCE SRAM Chip Enable OE Output Enable NC Not Connected VCC Power Supply GND Ground |
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