Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

APT5014B2VR Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APT5014B2VR
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Download  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5014B2VR Datasheet(HTML) 2 Page - Advanced Power Technology

  APT5014B2VR Datasheet HTML 1Page - Advanced Power Technology APT5014B2VR Datasheet HTML 2Page - Advanced Power Technology APT5014B2VR Datasheet HTML 3Page - Advanced Power Technology APT5014B2VR Datasheet HTML 4Page - Advanced Power Technology  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 2.34mH, RG = 25Ω, Peak IL = 37A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 These dimensions are equal to the TO-247AD without mounting hole
APT Reserves the right to change, without notice, the specifications and information contained herein.
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 1.6
MIN
TYP
MAX
5600
6720
737
1030
330
500
234
350
36
54
115
170
12
24
15
30
45
70
714
UNIT
pF
nC
ns
APT5014B2VR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN
TYP
MAX
37
148
1.3
595
11
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.28
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient


Similar Part No. - APT5014B2VR

ManufacturerPart #DatasheetDescription
logo
Inchange Semiconductor ...
APT5014B2VR ISC-APT5014B2VR Datasheet
337Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Similar Description - APT5014B2VR

ManufacturerPart #DatasheetDescription
logo
Advanced Power Technolo...
APT10040B2VFR ADPOW-APT10040B2VFR Datasheet
40Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10043JVR ADPOW-APT10043JVR Datasheet
73Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VR ADPOW-APT10050B2VR Datasheet
59Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVFR ADPOW-APT10050JVFR Datasheet
70Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M09B2VFR ADPOW-APT10M09B2VFR Datasheet
41Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M25BVFR ADPOW-APT10M25BVFR Datasheet
69Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M25SVR ADPOW-APT10M25SVR Datasheet
68Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10M30AVR ADPOW-APT10M30AVR Datasheet
66Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M11JVFR ADPOW-APT20M11JVFR Datasheet
74Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M18B2VFR ADPOW-APT20M18B2VFR Datasheet
41Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M18B2VR ADPOW-APT20M18B2VR Datasheet
39Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
More results


Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com