1SS196 datasheet(1/1 Pages) KISEMICONDUCTOR

Part #	1SS196

Description	SOT-23 Plastic-Encapsulate Diodes

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Manufacturer	KISEMICONDUCTOR [Kwang Myoung I.S. CO.,LTD]

Direct Link	http://www.kmis.co.kr/

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Reverse breakdown voltage

V(BR)

IR= 100µA

80

V

Reverse voltage

leakage current

IR

VR=80V

0.5

µA

Forward

voltage

VF

IF=100mA

1.2

V

Diode

capacitance

CD

VR=0V

f=1MHz

4

pF

Reverse recovery time

t r r

4

nS

KI SEMICONDUCTOR CO.

SOT-23 Plastic-Encapsulate Diodes

2. 4

1. 3

Unit: mm

SOT-23

1SS196

SWITCHING DIODE

FEATURES

Power dissipation

PD :

150

mW(Tamb=25

℃)

Forward Current

IF :

100

m A

Reverse Voltage

VR:

80

V

Operating and storage junction temperature range

TJ,Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Marking

G3

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1SS196 Datasheet(PDF) 1 Page - Kwang Myoung I.S. CO.,LTD

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