APT10040B2VFR datasheet(2/2 Pages) ADPOW

Part #	APT10040B2VFR

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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ADVANCED

TECHNICAL

INFORMATION

DYNAMIC CHARACTERISTICS

APT10040 B2VFR - LVFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

IS

ISM

VSD

dv/

dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6W

MIN

TYP

MAX

7700

690

330

380

33

196

18

14

66

9

UNIT

pF

nC

ns

MIN

TYP

MAX

25

100

1.3

5

Tj = 25°C

320

Tj = 125°C

650

Tj = 25°C

1.9

Tj = 125°C

5.4

Tj = 25°C

13

Tj = 125°C

21

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 9.60mH, RG = 25W, Peak IL = 25A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

5 IS £ -ID [Cont.], di/dt = 100A/µs, Tj £ 150°C, RG = 2.0W, VR = 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

RqJC

RqJA

MIN

TYP

MAX

0.20

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Dimensions in Millimeters and (Inches)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Collector

Emitter

Gate

Collector

Emitter

Gate

19.51 (.768)

20.50 (.807)

19.81 (.780)

21.39 (.842)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

3.10 (.122)

3.48 (.137)

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

2.59 (.102)

3.00 (.118)

0.48 (.019)

0.84 (.033)

2.29 (.090)

2.69 (.106)

5.79 (.228)

6.20 (.244)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

4.50

(.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2.87 (.113)

3.12 (.123)

2-Plcs.

TO-264 (L) Package Outline

T-MAX™ (B2) Package Outline

These dimensions are equal to the TO-247 without the mounting hole.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

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