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DRD870G36 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DRD870G36 Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 7 page  - 3 - DRD870G40 3/7 www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 12 kA I 2t I 2t for fusing VR = 50% VRRM - ¼ sine 0.72 MA 2s IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 15 kA I 2t I 2t for fusing VR = 0 1.125 MA 2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.032 °C/W Single side cooled Anode DC - 0.064 °C/W Cathode DC - 0.064 °C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 12kN Double side - 0.008 °C/W (with mounting compound) Single side - 0.016 °C/W Tvj Virtual junction temperature On-state (conducting) - 160 °C Reverse (blocking) - 150 °C Tstg Storage temperature range -55 175 °C Fm Clamping force 11.5 13.5 kN |
Similar Part No. - DRD870G36 |
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Similar Description - DRD870G36 |
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