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DIM800XSM33-F000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DIM800XSM33-F000
Description  Single Switch IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM800XSM33-F000 Datasheet(HTML) 4 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 1800V
Cge = 220nF
LS ~ 100nH
RG(ON) = 3.9
RG(OFF) = 6.2
3.0
μs
tf
Fall time
270
ns
EOFF
Turn-off energy loss
1050
mJ
td(on)
Turn-on delay time
1300
ns
tr
Rise time
275
ns
EON
Turn-on energy loss
RG(ON) = 2.7
RG(OFF) = 6.2
1250
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 1800V
dIF/dt = 4000A/μs
320
μC
Irr
Diode reverse recovery current
670
A
Erec
Diode reverse recovery energy
300
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 1800V
Cge = 220nF
LS ~ 100nH
RG(ON) = 3.9
RG(OFF) = 6.2
3.1
μs
tf
Fall time
280
ns
EOFF
Turn-off energy loss
1200
mJ
td(on)
Turn-on delay time
1200
ns
tr
Rise time
315
ns
EON
Turn-on energy loss
RG(ON) = 2.7
RG(OFF) = 6.2
1750
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 1800V
dIF/dt = 4000A/μs
600
μC
Irr
Diode reverse recovery current
800
A
Erec
Diode reverse recovery energy
600
mJ


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